PARALLEL SESSION
B1L-A
Memory Modeling and Simulation Session
SALA MAGNA
WEDNESDAY - 9 September | 10:20 - 12:20
CHAIRS
Elena Gnani, Eberhard Bär
SESSION PROGRAM
10:20 - 10:40
Intrinsic Conductance Variability in Ge-Rich GST ePCM Bitcells: A Characterization Study
Alessandro Motta, Matteo Baldo, Elisa Petroni, Giulia Samanni, Elisabetta Palumbo, Enrico Gomiero, Roberto Annunziata...
10:40 - 11:00
Physics-Based Compact Model for the Current in Hexagonal Boron Nitride Memristive Devices
Nadine Dersch, Mario Lanza, Mike Schwarz, Benjamin Iñíguez, Alexander Kloes
11:00 - 11:20
A Provably Optimized Approach to Predict Bit Error Rate Growth During Room Temperature Data Retention in Advanced 3-D NAND Flash Memories
Yu-Heng Liu, Yu-Siang Yang, Chia-Cheng Hsu, Yu-Cheng Hsu, Wei Lin
11:20 - 11:40
Alternating Bit-Line 3D-DRAM Architecture for Reduced Inter-Bit-Line Coupling
Woohyun Lee, Munhyeon Kim, Junhyeok Kim, Jae-Joon Kim
11:40 - 12:00
Cryo-DTCO: A Disorder-Aware Compact Model for Deep-Cryogenic FETs Enabling Multi-Bit Computing-in-Memory with 2T-eDRAM
Xufan Li, Zeyu Guo, Shengzhe Yan, Shuaidi Zhang, Jiawei Wang, Xiaoxin Xu, Feng Zhang, Jinshan Yue, Zhicheng Wu, Lingf...
12:00 - 12:20
Energy-Efficient, High-Density, and High-Performance IGZO eDRAM in Advanced Technology for AI Memory
Arvind Sharma, Charwak Apte, Daisuke Matsubayashi, Leandro M. Giacomini Rocha, Hyungrock Oh, Kurt English, Russell Sc...