PARALLEL SESSION
B2L-A
Reliability and new device concepts Session
SALA MAGNA
WEDNESDAY - 9 September | 13:50 - 15:50
CHAIRS
Andrea Redaelli, Claire Fenouillet-Beranger
SESSION PROGRAM
13:50 - 14:10
Reliability Assessment of hBN-Encapsulated TMD Devices: From FETs to Inverters
Fernando de Los Santos-Prieto, Axel Verdianu, Alexandros Provias, Alexander Karl, Lorenzo Pettorosso, Dmitry Polyushk...
14:10 - 14:30
Analog FoMs and Programmable Analog Building Blocks of TIG-RFETs in 22 nm FDSOI Technology
Yuxuan He, Juan Martinez, Julian Kulenkampff, Eric Fehrmann, Andreas Fuchsberger, Ananya Karmakar, Masiar Sistani, Al...
14:30 - 14:50
Gate Overlap Junction Engineering for Off-State Leakage Control in Vertical N-MOS Transistors
Joris Viano, Pascal Masson, Jordan Innocenti, Vincenzo Della-Marca, Christian Rivero, Julien Delalleau, Jean-Marc Bou...
14:50 - 15:10
Elemental Germanium as a CMOS-Compatible Phase-Change Material: From Fundamental Properties to Device Demonstration
Till Zellweger, Kevin Portner, Christoph Weilenmann, Hanglin He, Klemens Bauer, Alexandros Emboras, Mathieu Luisier
15:10 - 15:30
Extensive Analysis of PBTI-Induced Retention Degradation in IGZO-Based 2T0C Memory
Kazunori Kurishima, Daisuke Matsubayashi, Kensuke Ota, Adrian Chasin, Yiqun Wan, Harold Dekkers, Alexandru Pavel, Shr...
15:30 - 15:50
Field-Free Switching Spin-Orbit Torque Device with Controllable Switching Polarity for Logic and Memory Applications
Dingsong Jiang, Cancheng Xiao, Fantao Gao, Sirui Lu, Xuezhen Zhang, Yuhan Liang, Witold Skowroński, Tianxiang Nan