13:00 - 14:00 

Lunch

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14:00 - 14:10

Welcome and Introduction of SENSOTERIC

Jens Trommer (Namlab gGmbH, Dresden, DE)

 

14:10 - 14:30

“Guest Invitation” Key considerations for obtaining high performance contact-controlled thin-film transistors

Radu Sporea (University of Surrey, UK)

Source-gated transistors (SGTs) have a relatively long history of development but only recently have mainstream technologies allowed for their effective implementation at scale. This talk is addressed to those interested in efficient analog and mixed signal design with advanced thin-film transistors. They provide a development progression with a forward look toward SGT application to future edge processing of sensor data, signal conditioning, and current-mode driving. Crucially, the concept can be applied in practically any material system. As such, the talk will present the fundamentals of contact effect engineering and modelling, design rules for successful SGT implementation, specifics of performance optimisation in thin-film silicon, organic, and oxide semiconductors, and structural evolutions for additional functionality. Finally, the next step in the evolution of contact-controlled thin-film transistor, the multimodal transistor (MMT) will be briefly introduced. ​

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14:30 - 15:15

Young Scientist Forum – Short 4-5 min Pitch Presentations

 

14:30 – 14:35

Reliability Aspects of Emerging Reconfigurable Devices

Yuxuan He (Namlab gGmbH, Dresden, DE)

 

14:35 – 14:40

Analog Design of Reconfigurable Circuits Utilizing RFETs

Julian Kulenkampff (TU Darmstadt, DE)

 

14:40 – 14:45

Experimental Investigations of Reconfigurable Current Mirrors and Differential Amplifiers

Andreas Fuchsberger (TU Wien, AT)

 

14:45 – 14:50

Improving Reconfigurability and Regulation in Analog Circuits using RFETs

Marrit Jen Hong Li (TU Eindhoven, NL)

 

14:50 – 14:55

Logic-Integrated RFET Biosensors for Multi-Marker Detection

Roberta Grasso, (EPFL Lausanne, CH)

 

14:55 – 15:00

Molecular Sensor Transducer Platform with Reconfigurable Transistors

Hanna Wursag (TU Wien, AT)

 

15:00 – 15:05

In-Sensor Computation Based on Bio-RFET Circuits

Junyian Qian (EPFL Lausanne, CH)

 

15:10 – 15:30

Discuss Young Scientist Work at Posters

Following the Young Scientist Forum presentations, all 7 presenters will be available at their respective posters for in-depth discussion of their work and scientific exchange with interested audiences.

 

16:00 - 16:30

Schottky Barriers and Reconfigurable Field Effect Transistors: A Tutorial.

Giulio Galderisi (Namlab gGmbH, Dresden, DE)

Schottky Barrier Field Effect Transistors (SBFETs) hold the promise of delivering low leakage currents and an advantageous fabrication process with respect to conventional technologies. When gated through multiple independent gates, SBFETs allow to select the carriers involved in the conduction mechanisms and therefore to toggle unipolar n-type or p-type device characteristics at run-time. In this way, Reconfigurable Field Effect Transistors (RFETs) are built. The possibility to reconfigure those transistors make them great candidates for novel applications such as secure hardware computation, while the tunability of their drive current opens up novel approaches in analog circuit design. Moreover, SBFETs are currently under extensive investigation for cryo-electronic applications as well as for bio-sensing. The relevance of these devices is invigorated by their recent integration on 22nm FDSOI industrial technologies operating down to 0.8V. This talk guides both insiders and non-specialist through the different device variants and applications of Schottky Barrier and Reconfigurable Field Effect Transistors.

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16:30 - 17:00

Reconfigurable Si, Ge, SiGe, GeSn Transistor Technology Platform: Added Functionality for Beyond CMOS and Sensor Readout Applications

Walter M. Weber (TU Wien, AT)

We will report on a versatile device family based on ultrathin sheets of Si, SiGe, GeSn and Ge epitaxially grown on SOI substrates that allow four distinct device realizations Beyond CMOS capabilities.  The devices composed of an intrinsic and isolated channels can be steered to provide a) runtime reconfigurable charge polarity control, merging p- and n-FET functionality in a universal device, b) negative differential resistance (NDR) at room temperature with tunable peak to valley ratios. Reconfigurable field-effect transistors (RFETs) are a novel device concept that allows to fuse n- and p-type transport in a single universal transistor type. As determined by the application of a program gate (PG) electrode. Thereby, limitations of rigid conventional CMOS technologies relying on static operation schemes are overruled. Runtime reconfiguration can be used at a fine grain manner to build generic circuits that define their actual circuit topology by the applied programming signals. Thereby no doping is required, as the charge transport purely relies on the injection capabilities of gated Schottky junctions at source and drain. Changing the PG voltage leads to band-bending and therefore to electrostatic doping, adapting the barrier shape and thus the tunneling transmissibility to the conduction and valence band edges. We will explore novel circuit topologies and concepts that arise from the inherent reconfigurable nature of the devices. Applications for adaptive computing, tunable analog circuits for sensor readout and multi-valued-logic with reduced transistor count and latencies will be discussed.

 

17:00 - 17:30 

Tunable Analog Front Ends and the role of RFETs in enabling improved flexibility

Eugenio Cantatore (Eindhoven University of Technology, NL)

Tunable Analog Front Ends (AFEs) are a very attractive function in energy limited systems such as e.g. sensors for IOT applications. These AFEs can provide different performance points in the energy/accuracy/speed space, depending on the specific sensor and the specific application, thus enabling large gains in design effort and time-to-market, while preserving excellent efficiency in the actual applications. This talk will overview tunable AFEs approaches and provide some discussion of the role that Reconfigurable FETs (RFETs) can have in enabling improved tunability and flexibility in operation.

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