T5c
Power Management: Designing ICs in Monolithic GaN for Next Generation Power Electronics, An Industry Perspective.
9:30 - 17:30
ROOM FALLA
CHAIRS
Nick Van Houtven (MinDCet, Leuven, Belgium)
ABSTRACT
Gallium Nitride (GaN) technology offers advantageous Area x Rds,on and Qgate x Rds,on, which enables more compact power electronics systems. As GaN HEMTs are getting a bigger share of the commercial electronics market, there is a push towards using integrated solutions with in-package GaN gate drivers or monolithic solutions to increase the system power density and to decrease the total footprint.
PROGRAM
16:00 - 17:30
Monolithic GaN IC Design Solutions for Power Electronics
Öncü Benli Marin Palomo (MinDCet, Leuven, Belgium)
BIOSKETCHES
Öncü Benli Marin Palomo
Öncü Benli Marin Palomo was born on October 5, 1993, in Çorum, Türkiye. She received her Bachelor of Science (B.Sc.) in Electrical and Electronics Engineering from Middle East Technical University (METU), Türkiye, in 2016. In 2018, she completed a joint Master of Science (M.Sc.) degree in Nanoelectronics offered by the Catholic University of Leuven (KUL, Belgium) and the Technical University of Dresden (TUD, Germany). Since 2018, she has been working at MinDCet NV (Belgium) as an IC Designer specializing in power electronics. Her experience includes contributions to several ESA- and EC-funded research and development projects involving MRI-compatible power transfer, wide-bandgap circuit design for space and commercial power electronics, and reliability testing. For the past four years, her work has focused on GaNIC design, where she serves as a principal technical lead across all GaN-related projects.