PARALLEL SESSION
A2L-A
Characterization and Development of Analog, RF and Power Components Session
SALA MAGNA
TUESDAY - 8 September | 14:10 - 16:10
CHAIRS
Christoforos Theodorou, Michael Waltl
SESSION PROGRAM
14:10 - 14:30
Bias and Temperature Behavior of 1/f Noise and RTN in MOSFETs with Edge Conduction Effects
Owen Gauthier, Sébastien Haendler, Roberto Simola, Pascal Fornara, Franck Matteo, Patrick Scheer
14:30 - 14:50
Novel Back-Gate Thermometry Technique for Self-Heating Analysis in FD-SOI Devices Down to 4 K
Martin Vanbrabant, Vincent Dieuzeide, Martin Rack, Alexander Grill, Alican Caglar, Sriram Balamurali, Jean-Pierre Ras...
14:50 - 15:10
Investigation of Single-Event Burnout Robustness in 1.2 kV SiC Power Devices with Various Edge Termination Structures Under Proton Irradiation
Sangyeob Kim, Jeongtae Kim, Dong-Seok Kim, Hyuncheol Bae, Ogyun Seok
15:10 - 15:30
RF Performance and Radiation Tolerance Improvement in GaN-Based HEMTs Using Extremely Thin h-BN Layer and Air Spacer
Sung-Jae Chang, Seokho Moon, Dong-Seok Kim, Junhyung Jeong, Hyun-Wook Jung, Jawoon Kim, Semi Im, Jaesub Song, Changuk...
15:30 - 15:50
Multi-Step Gate Dielectric Engineering for 2.5 kV-Class GaN MIS-MBDS with 62 mV Low Hysteresis and Improved Interface Quality
Ningyu Luo, Huiqing Wen, Guohao Yu, Xiaodong Zhang, Qiang Zha
15:50 - 16:10
Impact of Emitter Electron Launcher on the Performance of Type-II InP/GaAsSb DHBTs
Mojtaba Ebrahimi Maroufi, Sara Hamzeloui, Akshay Arabhavi, Filippo Ciabattini, Andrea Cercaci, Olivier Ostinelli, Col...